Ferroelectric integrated circuit devices having an oxygen...

Details Ferroelectric integrated circuit devices having an oxygen... Ferroelectric integrated circuit devices having an oxygen...

2008-03-25

2008-03-25

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S303000, C257S306000, C257S310000, C257SE27104

Reexamination Certificate

active

07348616

ABSTRACT:
Ferroelectric integrated circuit devices, such as memory devices, are formed on an integrated circuit substrate. Ferroelectric capacitor(s) are on the integrated circuit substrate and a further structure on the integrated circuit substrate overlies at least a part of the ferroelectric capacitor(s). The further structure includes at least one layer providing a barrier to oxygen flow to the ferroelectric capacitor(s). An oxygen penetration path contacting the ferroelectric capacitor(s) is interposed between the ferroelectric capacitor(s) and the further structure. The layer providing a barrier to oxygen flow may be an encapsulated barrier layer. Methods for forming ferroelectric integrated circuit devices, such as memory devices, are also provided.

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