Ferroelectric film capacitor with intergranular insulation

Details Ferroelectric film capacitor with intergranular insulation Ferroelectric film capacitor with intergranular insulation

1998-02-20

1999-10-19

Chang, Joni

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438 3, H01L 218242

Patent

active

059703377

ABSTRACT:
A method of making ferroelectric film capacitors with sufficient yield for application to ULSI. In a first embodiment, after formation of a first ferroelectric film as the capacitor ferroelectric film, a very thin second ferroelectric film is deposited to fill the cavity portions generated between the crystal grains. This reduces the leakage current and increases the capacitor yield. In second embodiment, the cavity portions are filled with an insulating layer.

REFERENCES:
patent: 5789303 (1998-08-01), Leung et al.
patent: 5834348 (1998-11-01), Kwon et al.

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