Ferroelectric field effect transistor having a gate electrode be

Details Ferroelectric field effect transistor having a gate electrode be Ferroelectric field effect transistor having a gate electrode be

1999-03-05

2000-10-31

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257300, 257296, 438 3, H01L 2976

Patent

active

061406724

ABSTRACT:
A ferroelectric non-volatile memory in which each memory cell consists of a metal-ferroelectric-metal ("MFM") capacitor and a FET on a semiconductor substrate. The MFM and the FET are separated by an interlayer dielectric layer. A local interconnect connects the gate electrode of the FET to the bottom electrode of the MFM capacitor. Preferably, the MFM is located directly above the gate electrode, and the local interconnect is a conductive plug in a filled via. Preferably, the ferroelectric thin film of the MFM comprises a layered superlattice material. Preferably, a dielectric metal oxide insulator layer is located between the gate electrode and the semiconductor substrate.

REFERENCES:
patent: 5495117 (1996-02-01), Larson
patent: 5536672 (1996-07-01), Miller et al.
patent: 5767541 (1998-06-01), Hanagasaki
patent: 5789775 (1998-08-01), Evans, Jr. et al.
patent: 5864153 (1999-01-01), Nagel et al.

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