Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-06-21
2005-06-21
Baumeister, B. William (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S201000, C438S627000, C438S637000, C438S643000
Reexamination Certificate
active
06908802
ABSTRACT:
A circuit element that includes a ferroelectric device connected to a substrate device. The circuit element is constructed by fabricating the substrate device in a semiconductor substrate and depositing a dielectric layer over the semiconductor substrate. A via is then etched in the dielectric layer to provide access to the substrate device and filled with copper or tungsten. A layer of a conducting metallic oxide is then deposited on the conducting plug, and a layer of ferroelectric material is deposited on the layer of conducting metal oxide. The layer of conducting metallic oxide is deposited at a temperature below 450° C., preferably at room temperature.
REFERENCES:
patent: 6593638 (2003-07-01), Summerfelt et al.
Baumeister B. William
Berry Renee R.
Tachyon Semiconductor Corporation
Ward Calvin B.
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