Ferroelectric capacitors including a seed conductive film

Details Ferroelectric capacitors including a seed conductive film Ferroelectric capacitors including a seed conductive film

2006-06-20

2006-06-20

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S003000, C438S242000, C438S386000

Reexamination Certificate

active

07064365

ABSTRACT:
Ferroelectric capacitors include a support insulating film on an integrated circuit substrate and having a trench therein. A lower electrode is on sidewalls and a bottom surface of the trench. A seed conductive film covers the lower electrode. A ferroelectric film is provided on the support insulating film and the seed conductive film and an upper electrode is provided on the ferroelectric film. The lower electrode may fill the trench and the ferroelectric film may extend over all of the seed conductive film and the support insulating film adjacent the seed conductive film.

REFERENCES:
patent: 5198994 (1993-03-01), Natori
patent: 5523964 (1996-06-01), McMillan et al.
patent: 6297527 (2001-10-01), Agarwal et al.
patent: 2002/0075736 (2002-06-01), Kumura et al.
patent: 000044930 (2000-07-01), None
patent: 010059002 (2001-07-01), None
Notice to Submit Response for corresponding Korean Application No. 10-2002-0069541 dated Sep. 23, 2004 (English Translation).

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