Ferroelectric capacitor and its manufacturing method, and...

Details Ferroelectric capacitor and its manufacturing method, and... Ferroelectric capacitor and its manufacturing method, and...

2007-02-20

2007-02-20

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S393000, C438S396000, C438S508000, C438S508000, C257SE27048, C257SE21009, C257SE21011, C257SE21664

Reexamination Certificate

active

11233264

ABSTRACT:
A method for manufacturing a ferroelectric capacitor includes successively disposing a lower electrode, at least one intermediate electrode and an upper electrode over a base substrate, and providing ferroelectric films between the electrodes, respectively. In the step of forming the intermediate electrode, (a) a first metal film is formed by a sputter method over the ferroelectric film, and (b) a second metal film is formed by a vapor deposition method over the first metal film.

REFERENCES:
patent: 5206788 (1993-04-01), Larson et al.
patent: 2002/0024073 (2002-02-01), Shimada et al.
patent: 2001-230384 (2001-08-01), None

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