Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2008-10-29
2010-06-29
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C257SE21009, C257S295000
Reexamination Certificate
active
07745233
ABSTRACT:
A ferroelectric capacitor comprises a first electrode comprising an alloy of Ir and Ru, a ferroelectric layer disposed on the first electrode, and a second electrode disposed on the ferroelectric layer. A ferroelectric memory comprises a substrate and a plurality of memory cells arranged on the substrate. Each memory cell comprises a first electrode comprising an alloy of Ir and Ru, a ferroelectric layer disposed on the first electrode, and a second electrode disposed on the ferroelectric layer.
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Kim Suk-pil
Koo June-mo
Lee Jung-hyun
Park Young-soo
Shin Sang-min
Coleman W. David
Enad Christine
Harness & Dickey & Pierce P.L.C.
Samsung Electronics Co,. Ltd.
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