Ferroelectric capacitor and ferroelectric memory with Ir-Ru...

Semiconductor device manufacturing: process – Having magnetic or ferroelectric component

Reexamination Certificate

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C257SE21009, C257S295000

Reexamination Certificate

active

07745233

ABSTRACT:
A ferroelectric capacitor comprises a first electrode comprising an alloy of Ir and Ru, a ferroelectric layer disposed on the first electrode, and a second electrode disposed on the ferroelectric layer. A ferroelectric memory comprises a substrate and a plurality of memory cells arranged on the substrate. Each memory cell comprises a first electrode comprising an alloy of Ir and Ru, a ferroelectric layer disposed on the first electrode, and a second electrode disposed on the ferroelectric layer.

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KR Official Action issued in 10-2004-0059399 , Jan. 13, 2006.
Office Action dated Mar. 17, 2009 for corresponding Japanese Appln. No. 2005-219473.

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