Film formation method, thin-film transistor and solar battery

Details Film formation method, thin-film transistor and solar battery Film formation method, thin-film transistor and solar battery

2008-11-26

2010-11-16

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S149000, C438S162000, C438S164000, C438S166000, C257SE21413

Reexamination Certificate

active

07833826

ABSTRACT:
After a gate oxide film10has been formed on a silicon substrate G, a first step of forming a microcrystalline silicon film by high electron density plasma of an electron temperature of 2.0 eV or less and a second step of forming an ultra-microcrystalline silicon film by high electron density plasma of an electron temperature higher than 2.0 eV are repeated. A stacked-layer film20of the ultra-microcrystalline silicon film and the microcrystalline silicon film is thereby formed. With the film formation method described above, at least one of an n-channel thin-film transistor and a p-channel thin-film transistor with the stacked-layer film20functioned as an active layer may be manufactured.

REFERENCES:
patent: 2004/0231590 (2004-11-01), Ovshinsky
patent: 6-196701 (1994-07-01), None
patent: 8-148690 (1996-06-01), None
Toshiaki Sasaki, et al., “Plasma semiconductor process engineering-Introduction to Deposition and Etching”, with English Translation, First published by Uchida Rokakuho Publishing Co., Ltd., ISBN 4-7536-5048-0 C3055, Jul. 25, 2003, 5 pages.

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