Ferroelectric capacitor and ferroelectric memory with Ir-Ru...

Details Ferroelectric capacitor and ferroelectric memory with Ir-Ru... Ferroelectric capacitor and ferroelectric memory with Ir-Ru...

2004-11-02

2008-12-02

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S306000

Reexamination Certificate

active

07459736

ABSTRACT:
A ferroelectric capacitor comprises a first electrode comprising an alloy of Ir and Ru, a ferroelectric layer disposed on the first electrode, and a second electrode disposed on the ferroelectric layer. A ferroelectric memory comprises a substrate and a plurality of memory cells arranged on the substrate. Each memory cell comprises a first electrode comprising an alloy of Ir and Ru, a ferroelectric layer disposed on the first electrode, and a second electrode disposed on the ferroelectric layer.

REFERENCES:
patent: 5807774 (1998-09-01), Desu et al.
patent: 6188120 (2001-02-01), Andricacos et al.
patent: 6211035 (2001-04-01), Moise et al.
patent: 6337216 (2002-01-01), Koo
patent: 6344413 (2002-02-01), Zurcher et al.
patent: 6368910 (2002-04-01), Sheu et al.
patent: 6495428 (2002-12-01), Rhodes
patent: 6605835 (2003-08-01), Lee
patent: 6762445 (2004-07-01), Ogawa et al.
patent: 2003/0112649 (2003-06-01), Wouters et al.
patent: 07-302888 (1995-11-01), None
patent: 10-189885 (1998-07-01), None
patent: 10-303377 (1998-11-01), None
patent: 11-121702 (1999-04-01), None
patent: 11-243181 (1999-09-01), None
patent: 11-317377 (1999-11-01), None
patent: 2002-270785 (2002-09-01), None
patent: 10-1998-028587 (1998-07-01), None
patent: 1998-028587 (1998-07-01), None
patent: 10-1998-037162 (1998-08-01), None
patent: 10-1998-040642 (1998-08-01), None
patent: 1998-045801 (1998-09-01), None
patent: 10-1999-005451 (1999-01-01), None
patent: 10-1999-0057828 (1999-07-01), None
patent: 10-1999-0075997 (1999-10-01), None
patent: 1020000001040 (2000-01-01), None
patent: 1020030002093 (2003-01-01), None
Korean Office Action dated Jan. 13, 2006.

Affiliated with

Also associated with

Rating

Ferroelectric capacitor and ferroelectric memory with Ir-Ru... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ferroelectric capacitor and ferroelectric memory with Ir-Ru..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ferroelectric capacitor and ferroelectric memory with Ir-Ru... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4027701