Ferro-electric memory device and method of manufacturing the...

Details Ferro-electric memory device and method of manufacturing the... Ferro-electric memory device and method of manufacturing the...

2005-11-22

2005-11-22

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S303000

Reexamination Certificate

active

06967367

ABSTRACT:
A ferro-electric memory device includes a semiconductor substrate, a first transistor formed on the semiconductor substrate, and a first ferro-electric capacitor electrically connected to the first transistor and formed of a first capacitor material layer having a first lower electrode, a first ferro-electric film, and a first upper electrode, the first ferro-electric capacitor being thicker at its central portion than at its ends.

REFERENCES:
patent: 6101085 (2000-08-01), Kawahara et al.
patent: 6724026 (2004-04-01), Jacob et al.
patent: 10-41478 (1998-02-01), None

Affiliated with

Also associated with

Rating

Ferro-electric memory device and method of manufacturing the... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ferro-electric memory device and method of manufacturing the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ferro-electric memory device and method of manufacturing the... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3519412