Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2005-12-06
2005-12-06
Elms, Richard (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S145000, C365S149000, C257S295000
Reexamination Certificate
active
06972990
ABSTRACT:
A ferro-electric memory device includes a gate electrode which is formed on a semiconductor substrate, first and second diffusion layers which are formed in the semiconductor substrate, a first contact which is electrically connected to the first diffusion layer, a first oxygen barrier film having insulating properties, which is formed on the first contact, a second contact which is electrically connected to the first contact, a second oxygen barrier film having insulating properties, which is formed on the second contact, a ferro-electric capacitor which has a lower electrode, a ferro-electric film, and an upper electrode, a third contact which is electrically connected to the upper electrode, a first interconnection which is electrically connected to the second and third contacts, and a third oxygen barrier film having insulating properties, which is arranged between the ferro-electric capacitor and the second contact and brought into contact with the first oxygen barrier film.
REFERENCES:
patent: 6373743 (2002-04-01), Chen et al.
patent: 2001-237393 (2001-08-01), None
patent: 2002-151657 (2002-05-01), None
patent: 2003-86771 (2003-03-01), None
patent: 2003-179212 (2003-06-01), None
Kanaya Hiroyuki
Kumura Yoshinori
Kunishima Iwao
Ozaki Tohru
Shimojo Yoshiro
Elms Richard
Luu Pho M.
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