Plasma processing system control

Details Plasma processing system control Plasma processing system control

2005-12-06

2005-12-06

Vu, David (Department: 2828)

Electric lamp and discharge devices: systems

Discharge device load with fluent material supply to the...

Plasma generating

C118S7230MR, C156S345480

Reexamination Certificate

active

06972524

ABSTRACT:
A method of approximating an ion energy distribution function (IEDF) at a substrate surface of a substrate, the substrate being processed in a plasma processing chamber. There is included providing a first voltage value, the first voltage value representing a value of a first voltage that represents a DC potential (VDC) at the substrate surface. There is also included providing a peak low frequency RF voltage value (VLFRF(PEAK)) during plasma processing, the peak low frequency RF voltage (VLFRF(PEAK)) value representing a peak value of a low frequency RF voltage (VLFRF) supplied to the plasma processing chamber. There is further included providing a computing device configured to compute the IEDF from the first voltage value and the peak low frequency RF voltage value (VLFRF(PEAK)) in accordance withf⁡(E)≡(ⅆVLFⅆt)-1,whereinVLF⁡(t)=[(VLFRF⁡(PEAK)-Vdc2)1/2-(VLFRF⁡(PEAK)-Vdc8)1/2⁢sin⁢⁢ω⁢⁢t]2.

REFERENCES:
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patent: 6488807 (2002-12-01), Collins et al.
patent: 6885153 (2005-04-01), Quon
Kawamura et al., “Ion energy distributions in RF sheaths; review, analysis and simulation”, 1999, Plasma Sources Science Technology 8, R45-R64.
Lieberman et al., “Principles of Plasma Discharges and Materials Processing”, 1994, New York, John Wiley and Sons, Inc.

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