FeRAM using programmable register

Details FeRAM using programmable register FeRAM using programmable register

2005-08-02

2005-08-02

Tran, Michael (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S189090

Reexamination Certificate

active

06924998

ABSTRACT:
A nonvolatile ferroelectric memory device includes a cell array having a multi-bitline structure for converting a sensing voltage of a sub bitline into current to induce a sensing voltage of a main bitline. The memory device comprises a plurality of cell array blocks, a common data bus, a sense amplifier array unit and a reference voltage controller. The common data bus, shared by the plurality of cell array blocks, transmits cell data of the cell array blocks. The sense amplifier array unit compares a reference voltage with cell data applied from the common data bus and senses the cell data. The reference voltage controller generates an adjustable internal reference voltage by adjusting a ferroelectric capacitance, selectively switches the internal reference voltage and an external reference voltage applied from a pad, and outputs the selectively switched value as the reference voltage into the sense amplifier array unit. In the memory device, cell characteristics can be tested without extra mask layer processes by programmably selecting reference voltages. Additionally, weak cells are effectively repaired by regulating reference voltages programmably, thereby improving yield and reliability of a chip.

REFERENCES:
patent: 5396113 (1995-03-01), Park et al.
patent: 6081453 (2000-06-01), Iwahashi
patent: 6215692 (2001-04-01), Kang
patent: 1019980014400 (2000-07-01), None

Affiliated with

Also associated with

Rating

FeRAM using programmable register does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with FeRAM using programmable register, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and FeRAM using programmable register will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3513741