Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2005-08-23

2005-08-23

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S197000, C438S604000, C438S285000, C438S590000, C438S172000, C257S183000, C257S192000, C257S183100, C257S194000, C148SDIG001

Reexamination Certificate

active

06933181

ABSTRACT:
In a method for fabricating a semiconductor device, a first semiconductor layer of aluminum gallium nitride is first formed on a substrate, and a protection film containing silicon is then formed on the first semiconductor layer in such a manner that a device-isolation region is uncovered. Thereafter, the method further includes the step of heat-treating the first semiconductor layer in an oxidizing atmosphere whose temperature is adjusted to be within a range of 950° C. or more and 1050° C. or less.

REFERENCES:
patent: 5192987 (1993-03-01), Khan et al.
patent: 5296395 (1994-03-01), Khan et al.
patent: 6548333 (2003-04-01), Smith
Masato et al., Novel High Drain Breakdown Voltgage AlGaN/GaN HFETs using selective Thermal Oxidation Process, IEEE IEDM 00-377, 2000.
Sullivan et al., High-Power 10 GHz operation of AlGaN HFETS on insulating SiC, IEEE Elect. Device Letters, vol. 19, No. 6, 1998.
C.F. Lin et al., Improved Contact Performance of GaN Film Using Si Diffusion:, 2000 American Institute of Physics, Applied Physics Letters, Vo. 76, No. 14, pp. 1878-1880, Apr. 3, 2000.
Hiroyuki Masato et al., “Novel High Drain Breakdown Voltage AlGaN/GaN HFETs Using Selective Thermal Oxidation Process”, IEEE, IEDM 16.2.1-16.2.4, pp. 377-380, 2000.

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