FeRAM device and method for manufacturing the same

Details FeRAM device and method for manufacturing the same FeRAM device and method for manufacturing the same

2007-11-13

2007-11-13

Quach, T. N. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S306000, C257SE27086, C438S253000, C438S396000

Reexamination Certificate

active

11325633

ABSTRACT:
An embodiment of the FeRAM includes a ferroelectric capacitor including a bottom electrode, a ferroelectric layer, and a top electrode. Strontium ruthenium oxide is formed between the bottom electrode and the ferroelectric layer and between the ferroelectric layer and the top electrode. A diffusion barrier layer including strontium ruthenium oxide and iridium is formed between the top electrode and a direct cell contact plug coupled to a plate line interconnecting top electrodes of ferroelectric capacitors. Thus, diffusion of nitrogen or metallic materials produced in subsequent processes is suppressed to prevent degradation of the ferroelectric layer.

REFERENCES:
patent: 6351006 (2002-02-01), Yamakawa et al.
patent: 6423592 (2002-07-01), Sun
patent: 6674633 (2004-01-01), Horii et al.
patent: 7105400 (2006-09-01), Imai et al.
patent: 7151289 (2006-12-01), Ito
patent: 2001/0000923 (2001-05-01), Takemura
patent: 2005/0118795 (2005-06-01), Hidaka et al.
patent: 2001-0058494 (2001-07-01), None
patent: 2004-0059391 (2004-07-01), None
English language abstract of Korean Publication No. 2005-0007653.
English language abstract of Japanese Publication No. 08-315586.

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