Feature patterning methods

Details Feature patterning methods Feature patterning methods

2008-02-13

2010-02-23

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S311000, C438S712000, C438S733000, C257SE21032, C257SE21054, C257SE21058, C257SE21218, C257SE21231, C257SE21267, C257SE21304

Reexamination Certificate

active

07666800

ABSTRACT:
Methods of patterning features of semiconductor devices and methods of processing and fabricating semiconductor devices are disclosed. In one embodiment, a method of processing a semiconductor device includes forming first sidewall spacers on a first hard mask, removing the first hard mask, and forming a first material layer over the first sidewall spacers. A second hard mask is formed over the first material layer and the first sidewall spacers. Second sidewall spacers are formed on the second hard mask, and the second hard mask is removed. At least the first sidewall spacers are patterned using the second sidewall spacers as a mask.

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Hand, A., “Applied's Litho Scheme: Patterning vs. Printing,” Semiconductor International, http://www.reed-electronics.com/semiconductor/article/CA6428429?industryid=3030, Apr. 1, 2007, pp. 1-3, Reed Business Information, Oak Brook, IL.

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