Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Reexamination Certificate
2007-12-18
2011-11-01
Matthews, Colleen (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
C257SE21530, C257SE23179, C356S401000, C356S603000
Reexamination Certificate
active
08049213
ABSTRACT:
A method of measuring dimensional characteristics includes providing a substrate and forming a reflective layer over the substrate. A dielectric layer is then formed over the reflective layer. The dielectric layer includes a grating pattern and a resistivity test line inset in a transparent region. Radiation is then directed onto the dielectric layer so that some of the radiation is transmitted through the transparent region to the reflective layer. A radiation pattern is then detected from the radiation reflected and scattered by the metal grating pattern. The radiation pattern is analyzed to determine a first dimensional information. Then the resistance of the resistivity test line is measured, and that resistance is analyzed to determine a second dimensional information. The first and second dimensional informations are then compared.
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Chiu Yi-Wei
Chiu Yih Song
Jeng Chih-Cherng
Su Ching-Chung
Su Pin Chia
Haynes and Boone LLP
Matthews Colleen
Taiwan Semiconductor Manufacturing Company , Ltd.
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