Fault repair method for a memory device

Details Fault repair method for a memory device Fault repair method for a memory device

1997-08-19

1999-02-02

Yoo, Do Hyun

Static information storage and retrieval

Read/write circuit

Bad bit

36518905, 36523008, G11C 700

Patent

active

058674357

ABSTRACT:
In a repair method for a memory device, a process for determining whether or not repair is possible is first performed, following which processes are carried out for determining whether or not repair of failed lines is possible and whether or not repair of failed bits is possible. It is then determined whether or not a limit exists for a limbo portion, and if a limit exists, failure address connections of spare column portions are extracted from a buffer memory, and a rule check of the limbo portion and an adjustment of repair addresses is carried out in one-block portions for the obtained repair addresses.

REFERENCES:
patent: 5544118 (1996-08-01), Harari
patent: 5574684 (1996-11-01), Tomoeda
patent: 5576999 (1996-11-01), Kim et al.

Affiliated with

Also associated with

Rating

Fault repair method for a memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fault repair method for a memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fault repair method for a memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1123679