Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design
Reexamination Certificate
2006-10-31
2006-10-31
Lin, Sun James (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Nanotechnology related integrated circuit design
C716S030000
Reexamination Certificate
active
07131104
ABSTRACT:
A method is described for performing model-based optical proximity corrections on a mask layout used in an optical lithography process having a plurality of mask shapes. Model-based optical proximity correction is performed by computing the image intensity on selected evaluation points on the mask layout. The image intensity to be computed includes optical flare and stray light effects due to the interactions between the shapes on the mask layout. The computation of the image intensity involves sub-dividing the mask layout into a plurality of regions, each region at an increasing distance from the evaluation point. The contributions of the optical flare and stray light effects due to mask shapes in each of the regions are then determined. Finally, all the contributions thus obtained are combined to obtain the final computation of the image intensity at the selected point.
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patent: 6763514 (2004-07-01), Zhang
patent: 2004/0205688 (2004-10-01), Pierrat
patent: 2005/0055658 (2005-03-01), Mukherjee et al.
Chen Zheng
Gallatin Gregg M.
Gofman Emanuel
Lai Kafai
Lavin Mark A.
International Business Machines Coporation
Schnurmann H. Daniel
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