Failed memory cell repair circuit of semiconductor memory

Details Failed memory cell repair circuit of semiconductor memory Failed memory cell repair circuit of semiconductor memory

1996-06-28

1997-12-30

Nelms, David C.

Static information storage and retrieval

Read/write circuit

Bad bit

365201, 365203, 3652257, G11C 700

Patent

active

057038163

ABSTRACT:
In semiconductor memory devices, failed memory cells are problematic because they draw excessive standby currents. To repair such devices before packaging, the failed memory cell columns are replaced by redundant columns. To ensure that a replaced column having a failed cell does not draw excessive standby current, the invention provides for turning off the precharge circuit transistor pair that otherwise would supply precharge current to the bit line pair in the defective column, and also turning off the cell power line circuit that otherwise would supply current along a cell power line to the cell power nodes in the defective column of the memory array.

REFERENCES:
patent: 4587639 (1986-05-01), Aoyama et al.
patent: 4639895 (1987-01-01), Iwahashi et al.
patent: 5414668 (1995-05-01), Nakashima et al.
patent: 5500823 (1996-03-01), Martin et al.
patent: 5548555 (1996-08-01), Lee et al.
patent: 5577051 (1996-11-01), McClure

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