Facing-targets-type sputtering apparatus and method

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

Reexamination Certificate

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C204S192120, C204S298060, C204S298080, C204S298120, C204S298170

Reexamination Certificate

active

06911123

ABSTRACT:
Disclosed is a facing-targets-type sputtering apparatus and method capable of forming a metal film under the conditions of low gas pressure and low discharge voltage. An opening is formed in each of two facing side faces of a vacuum chamber vessel or in each of two facing side faces of a box-type discharge unit attached to an opening portion of a vacuum chamber vessel. The two openings are covered by a pair of cooling blocks. Each cooling block holds a target facing a discharge space. Magnetic field generation means is disposed so as to surround each target and operative to generate a magnetic field that surrounds a discharge space provided between the paired targets. Electron reflection means is disposed above the exposed surface of each target along the periphery of the target. A DC power and a high-frequency power are applied between the vacuum chamber vessel and the targets.

REFERENCES:
patent: 4407894 (1983-10-01), Kadokura et al.
patent: 4784739 (1988-11-01), Kadokura et al.
patent: 4842708 (1989-06-01), Kadokura et al.
patent: 4931169 (1990-06-01), Scherer et al.
patent: 6156172 (2000-12-01), Kadokura
patent: 6328857 (2001-12-01), Anzaki et al.
Proceedings: The 61stSymposium of the Japan Society of Applied Physics, Sep. 2000, 5a-P8-5, 5a-P8-6 (Translation attached).
Abridged translation for JP 62-14633, JP 63-20303, H4-11624, H10-8246.

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