Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Reexamination Certificate
2008-09-09
2008-09-09
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
C438S303000, C438S520000, C438S528000, C438S705000, C438S724000, C438S744000, C438S757000
Reexamination Certificate
active
10925517
ABSTRACT:
Replacement metal gates may be formed by removing a polysilicon layer from a gate structure. The gate structure may be formed by patterning the polysilicon layer and depositing a spacer layer over the gate structure such that the spacer layer has a first polish rate. The spacer layer is then etched to form a sidewall spacer. An interlayer dielectric is applied over the gate structure with the sidewall spacer. The interlayer dielectric has a second polish rate higher than the first polish rate. A hard mask may also be applied over the gate structure and implanted so that the hard mask may be more readily removed.
REFERENCES:
patent: 5391510 (1995-02-01), Hsu et al.
patent: 5856225 (1999-01-01), Lee et al.
patent: 6368947 (2002-04-01), Yu
patent: 6607950 (2003-08-01), Henson et al.
Barns Chris E.
Brask Justin K.
Doczy Mark L.
Kavalieros Jack
Prince Matt
Duong Khanh B
Smith Zandra
Trop Pruner & Hu P.C.
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