Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-09-19
2009-12-29
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S585000, C257S288000, C257S616000, C257SE51040, C977S720000, C977S721000, C977S742000, C977S858000, C977S859000
Reexamination Certificate
active
07638383
ABSTRACT:
Faceted catalytic dots are used for directing the growth of carbon nanotubes. In one example, a faceted dot is formed on a substrate for a microelectronic device. A growth promoting dopant is applied to a facet of the dot using an angled implant, and a carbon nanotube is grown on the doped facet of the dot.
REFERENCES:
patent: 7098056 (2006-08-01), Demers
patent: 2003/0197120 (2003-10-01), Miyamoto
patent: 2004/0101469 (2004-05-01), Demers
patent: 2004/0127130 (2004-07-01), Yi et al.
patent: 2006/0022221 (2006-02-01), Furukawa et al.
patent: 2007/0014151 (2007-01-01), Zhang et al.
patent: 2008/0032238 (2008-02-01), Lu et al.
Chau Robert S.
Doyle Brian S.
Jin Been-Yih
Radosavljevic Marko
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Joy Jeremy J
Smith Zandra
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