Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Patent
1997-09-05
1999-12-07
Duda, Kathleen
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
430950, G03F 700
Patent
active
059981008
ABSTRACT:
A fabrication process includes a step of providing a substrate to be fabricated. A multi-layer antireflective layer is then formed on the substrate. A patterned resist having a thickness less than 850 nanometers is formed on the multi-layer antireflective layer and the substrate is fabricated using the patterned resist as a mask.
REFERENCES:
patent: 4053350 (1977-10-01), Olsen et al.
patent: 4426767 (1984-01-01), Swanson et al.
patent: 4620898 (1986-11-01), Banks et al.
patent: 4704342 (1987-11-01), Lehrer et al.
patent: 4975144 (1990-12-01), Yamazaki et al.
patent: 5017264 (1991-05-01), Yamazaki et al.
patent: 5022959 (1991-06-01), Itoh et al.
patent: 5102498 (1992-04-01), Itoh et al.
patent: 5185293 (1993-02-01), Franke et al.
patent: 5240554 (1993-08-01), Hori et al.
patent: 5437961 (1995-08-01), Yano
patent: 5445710 (1995-08-01), Hori et al.
patent: 5498571 (1996-03-01), Mori et al.
patent: 5656128 (1997-08-01), Hashimoto
Azuma Tsukasa
Dobuzinsky David M.
Matsuda Tetsuo
Ohiwa Tokuhisa
Okumura Katsuya
Duda Kathleen
Kabushiki Kaisha Toshiba
LandOfFree
Fabrication process using a multi-layer antireflective layer does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Fabrication process using a multi-layer antireflective layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication process using a multi-layer antireflective layer will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-822125