Fabrication process of a semiconductor integrated circuit...

Details Fabrication process of a semiconductor integrated circuit... Fabrication process of a semiconductor integrated circuit...

2006-01-17

2006-01-17

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S773000

Reexamination Certificate

active

06987069

ABSTRACT:
With a view to preventing the oxidation of a metal film at the time of light oxidation treatment after gate patterning and at the same time to making it possible to control the reproducibility of oxide film formation and homogeneity of oxide film thickness at gate side-wall end portions, in a gate processing step using a poly-metal, a gate electrode is formed by patterning a gate electrode material which has been deposited over a semiconductor wafer1A having a gate oxide film formed thereon and has a poly-metal structure and then, the principal surface of the semiconductor wafer1A heated to a predetermined temperature or vicinity thereof is supplied with a hydrogen gas which contains water at a low concentration, the water having been formed from hydrogen and oxygen by a catalytic action, to selectively oxidize the principal surface of the semiconductor wafer1A, whereby the profile of the side-wall end portions of the gate electrode is improved.

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