Fabrication process of a semiconductor device

Details Fabrication process of a semiconductor device Fabrication process of a semiconductor device

2005-10-11

2005-10-11

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S785000, C438S790000

Reexamination Certificate

active

06953731

ABSTRACT:
A method of fabrication a semiconductor device includes the steps of forming an insulation film containing Si and oxygen on a silicon substrate, and depositing a metal oxide film on the insulation film by a chemical vapor deposition process that uses a metal organic source material, wherein the step of depositing the metal oxide film is conducted such that the metal oxide film takes a crystalline state immediately after the deposition step.

REFERENCES:
patent: 6674138 (2004-01-01), Halliyal et al.
patent: 6767795 (2004-07-01), Ahn et al.
patent: 2002/0028570 (2002-03-01), Vaartstra
patent: 2002/0167005 (2002-11-01), Yu et al.
patent: 2001-015739 (2001-01-01), None
patent: 2002-100627 (2002-04-01), None
patent: 2002-167672 (2002-06-01), None
patent: WO 00/36640 (2000-06-01), None

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