Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-05-10
2005-05-10
Cao, Phat X. (Department: 2814)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S637000, C438S638000
Reexamination Certificate
active
06890848
ABSTRACT:
A method of fabricating a semiconductor device includes the steps of forming a first insulation film on a substrate by a spin-on process, applying a curing process to the first insulation film at a temperature of 380-500° C. over a duration of 5-180 seconds, and forming a second insulation film on the first insulation film by a spin-on process.
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Allegretti Federica
Hoshino Satohiko
Maekawa Kaoru
Sugiura Masahito
Cao Phat X.
Doan Theresa T.
Tokyo Electron Limited
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