Fabrication process for MOSFET devices and a reproducible capaci

Details Fabrication process for MOSFET devices and a reproducible capaci Fabrication process for MOSFET devices and a reproducible capaci

1998-02-12

1999-12-21

Chang, Joni

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438241, 438257, H01L 218234

Patent

active

060048417

ABSTRACT:
A process has been developed in which a capacitor structure can be simultaneously fabricated with NFET and PFET devices, to be used in EEPROM, SRAM or DRAM cells. The process features the use of a silicon nitride layer, protecting an underlying capacitor dielectric layer from an oxidation ambient, presented during a subsequent NFET source and drain drive-in procedure.

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