Fabrication process employing a single dopant implant for format

Details Fabrication process employing a single dopant implant for format Fabrication process employing a single dopant implant for format

1998-03-30

1999-12-28

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438290, 438289, 438302, 438301, 438303, 438306, 438307, H01L 21336

Patent

active

06008099&

ABSTRACT:
A method of making a lightly doped drain transistor includes the steps of forming a gate electrode (52) and a gate oxide (54) over a semiconductor substrate (56) and forming a drain (70) in a drain region (58) and a source (72) in a source region (60) of the substrate (56). The method further includes generating interstitials (62) near a lateral edge of at least one of the drain (70) and the source (72) and thermally treating the substrate (56). The thermal treatment cause the interstitials (62) to enhance a lateral diffusion (84) of the drain (70) under the gate oxide (54) without substantially impacting a vertical diffusion (82) of the drain (70) or the source (72). The enhanced lateral diffusion (84) results in the formation of at least one of a lightly doped drain extension region (75) and a lightly doped source extension region (76) without an increase in a junction depth of the drain (70) or the source (72). The step of generating interstitials (62) may include the step of implanting at least one of the drain region (58) and the source region (60) of the substrate (56) with a large tilt angle implant which creates the interstitials (62) at a location near the gate oxide (54).

REFERENCES:
patent: 5360749 (1994-11-01), Anjum et al.
patent: 5470794 (1995-11-01), Anjum et al.
patent: 5593907 (1997-01-01), Anjum et al.
"An approach using a subamorphizing threshold dose silicon implant of optimal energy to achieve shallower junctions", Akif Sultan and Sanjay Banerlee, Journal of Applied Physics, vol. 83, No. 12, 1998 American Institute of Physics, Jun. 15, 1998, pp. 8046-8050.

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