Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Ball or nail head type contact – lead – or bond
Reexamination Certificate
2007-10-30
2007-10-30
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Ball or nail head type contact, lead, or bond
C257S786000, C257S784000, C257SE23020
Reexamination Certificate
active
10434524
ABSTRACT:
A wire connection structure for an integrated circuit (IC) die includes a semiconductor wafer with an active device and/or a passive device. One or more dielectric layers are arranged adjacent to the active and/or passive device. One or more metal interconnect layers are arranged adjacent to the active and/or passive device. A contact pad is arranged in an outermost metal interconnect layer. A passivation layer is arranged over the outermost metal interconnect layer and includes at least one passivation opening that exposes the contact pad. A bond pad is arranged over the passivation layer and the active and/or passive device and is connected to the contact pad through the passivation opening. Formation of the bond pad does not damage the active and/or passive device.
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Lammers, David “LSI Logic Extends Reach of Wire Bond Packaging,”EE TimesOct. 23, 2001 at <http://www.eet.com/story/OEG20021022S0023> visited on Oct. 23, 2002, 4 pages total.
MEG02-008 “Method of Wire Bonding Over Active Area of a Semiconductor Circuit”—U.S. Appl. No. 09/858,528, filed on May 7, 2001.
Lee Jin-Yuan
Lin Mou-Shiung
Sutardja Sehat
Wu Albert
Mandala Jr. Victor A.
Marvell Semiconductor, Inc.
MEGIC Corporation
Pert Evan
Stoffel Klaus P.
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