Fabrication of transistors with a fully silicided gate...

Details Fabrication of transistors with a fully silicided gate... Fabrication of transistors with a fully silicided gate...

2007-02-14

2008-08-26

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S585000, C257SE21623

Reexamination Certificate

active

07416949

ABSTRACT:
Manufacturing a semiconductor device by forming first and second gates including patterning a silicon-containing layer on a substrate. Etched simultaneously the patterned silicon-containing layer of the first gate, and first substrate portions adjacent to the first gate to form a first gate electrode and source and drain openings. Forming SiGe simultaneously in first gate electrode source and drain openings. Second gate and second substrate portions are masked. SiGe is removed from an upper surface of the first gate to form a second opening therein. A metal deposited on the first and second gates forms a metal layer thereon. Annealing first and second gates to form FUSI first and second gate electrodes. A metal amount at an interface of the FUSI gate electrode layer and an underlying gate dielectric layer is greater than at a second interface of the second FUSI gate electrode layer and an underlying second gate dielectric layer.

REFERENCES:
patent: 2004/0245583 (2004-12-01), Horiuchi et al.
patent: 2006/0019437 (2006-01-01), Murto et al.
patent: 2007/0218637 (2007-09-01), Harada et al.
patent: 2007/0275528 (2007-11-01), Koike
Kittle, et al., “Scalability of Ni FUSI gate processes: phase and Vt control to 30 nm gate lengths”, 2005 Symposium on VLSI Technology Digest of Technical Papers, pp. 72-73.

Affiliated with

Also associated with

Rating

Fabrication of transistors with a fully silicided gate... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabrication of transistors with a fully silicided gate..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication of transistors with a fully silicided gate... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4015878