Fabrication of single-crystal silicon structures using sacrifici

Details Fabrication of single-crystal silicon structures using sacrifici Fabrication of single-crystal silicon structures using sacrifici

1996-05-31

1999-03-16

Chang, Ceila

Etching a substrate: processes

Etching of semiconductor material to produce an article...

438 50, 438 52, 438593, 7350409, 360 9701, 360 9906, 360 9908, H01L 2100

Patent

active

058825320

ABSTRACT:
A thin micromechanical device is fabricated in a way that is mechanically compatible with wafer handling for conventional-thickness wafers. A removable bonding layer bonds a fabrication wafer to a substantially conventional-thickness handle wafer to form a bonded wafer pair. The micromechanical device is formed in the fabrication wafer by subjecting the bonded wafer pair to processing including wafer handling for conventional-thickness wafers. The micromechanical device is formed to include part of the fabrication wafer. Finally, the bonding layer underlying the micromechanical device is removed to release the micromechanical device from the handle wafer.

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