Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-02-11
2000-05-09
Whitehead, Jr., Carl
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438166, 438308, 438581, 438649, 438662, H01L 2144
Patent
active
060603925
ABSTRACT:
Stable suicides are formed utilizing excimer laser crystallization in place of a conventional second high temperature rapid thermal processing annealing step. Specifically, thermally unstable silicide having a metal-rich surface layer is conventionally formed utilizing deposition of refractory metal followed by low temperature annealing. After removal of unreacted refractory metal, an amorphous silicon film is deposited on top of the unstable silicide and exposed to radiation from an excimer laser, such that the amorphous silicon melts, reacts with refractory metal from the underlying unstable silicide, and reforms as thermally stable silicide evidencing low electrical resistance.
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Essaian Stepan
Naem Abdalla
Duong Khanh
Jr. Carl Whitehead
National Semiconductor Corporation
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