Fabrication of semiconductor structures by ion implantation

Details Fabrication of semiconductor structures by ion implantation Fabrication of semiconductor structures by ion implantation

1997-07-22

1999-08-10

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438221, 438224, 438524, 257397, H01L 2176, H01L 218238, H01L 218249

Patent

active

059372877

ABSTRACT:
The present invention relates to the formation of trench isolation structures that isolate active areas and a preferred doping in the fabrication of a CMOS device with a minimized number of masks. Ions of a P-type dopant are implanted into a semiconductor substrate having therein a P-well and an N-well. Each of the N-well and P-well has therein a trench. The ions of the P-type dopant are implanted beneath each of the trenches in the P-well and the N-well to create a first P-type dopant concentration profile in the semiconductor substrate, wherein the P-well and the N-well are substantially unimplanted by the ions of the P-type dopant in active areas adjacent to the respective trenches therein. A second implanting ions of a P-type dopant is made into the semiconductor substrate. The second implanting is beneath each of the trenches in the P-well and the N-well to form a second P-type dopant concentration profile. The second implanting is also though one or more barrier layers on the semiconductor substrate into the P-well and the N-well in active areas adjacent to each of the trenches in the P-well and the N-well to form a third P-type dopant concentration profile, wherein the second and third P-type dopant concentration profiles are simultaneously formed. Next, the respective trenches in each of the P-well and N-well are substantially filled with a dielectric material. Ions of an N-type dopant are then implanted into the N-well, wherein the P-well is substantially unimplanted by the ions of the N-type dopant, and wherein the N-well has therein a concentration of the N-type dopant that is substantially greater than the P-type dopant therein. The N-type dopant dopes active areas in the N-well so as to achieve a desired threshold voltage.

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