Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-08-29
2008-09-02
Trinh, Michael (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S223000, C438S232000, C257SE21585
Reexamination Certificate
active
07419863
ABSTRACT:
Complementary IGFETs (210W and220W or530and540) are fabricated so that the body dopant concentration in each IGFET decreases by at least10in moving from a subsurface location in the body material of that IGFET up to one of its source/drain zones. Semiconductor dopant, typically a fast-diffusing species such as aluminum, is introduced into starting semiconductor material to form a relatively uniformly doped region that serves as body material (108) for one of the IGFETs. A remaining part of the starting material serves as body material (268) for the other IGFET. Well dopant is introduced into the body material of each IGFET for establishing the requisite body dopant profile. Alternatively, a cavity is formed through an initial structure having body material (108) doped in the preceding way for one of the IGFETs. Semiconductor material is introduced into the cavity to form the body material (568) for the other IGFET.
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Meetin Ronald J.
National Semiconductor Corporation
Trinh Michael
LandOfFree
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