Fabrication of semiconductor device having shallow junctions inc

Details Fabrication of semiconductor device having shallow junctions inc Fabrication of semiconductor device having shallow junctions inc

1999-01-25

2000-02-15

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438300, 438301, 438305, 438978, 257347, 257382, 257750, H01L 21336, H01L 218238, H01L 2701, H01L 2976, H01L 2348

Patent

active

060252421

ABSTRACT:
A semiconductor device having shallow junctions is provided by providing a semiconductor substrate having source and drain regions and polysilicon gate regions; depositing selective silicon on the source and drain regions; providing dopant into the source and drain regions forming shallow junctions; forming first insulating spacers on sidewalls of the gate regions; forming second insulating sidewall spacers on the first insulating spacers; and siliciding the top surfaces of the source and drain regions.

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