Fabrication of semiconductor device having shallow junctions

Details Fabrication of semiconductor device having shallow junctions Fabrication of semiconductor device having shallow junctions

1999-01-25

1999-12-07

Fahmy, Wael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438306, 438307, 438558, 438300, H01L 21331

Patent

active

05998273&

ABSTRACT:
A semiconductor device having shallow junctions is provided by providing a semiconductor substrate having source and drain regions and polysilicon gate regions; depositing selective silicon on the source and drain regions and on the polysilicon gate regions; providing dopant into the source and drain regions forming shallow junctions; forming first insulating spacers on sidewalls of the gate regions; forming second insulating sidewall spacers on the first insulating spacers; implanting dopants into the source and drain regions for providing deep junctions and into the polysilicon gate regions; and siliciding the top surfaces of the source and drain regions and polysilicon gate regions.

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