Fabrication of recordable electrical memory

Details Fabrication of recordable electrical memory Fabrication of recordable electrical memory

2007-10-10

2010-10-12

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S245000, C438S257000, C438S264000, C257SE21422, C257SE21689, C257SE27086, C257SE27102, C257SE27103

Reexamination Certificate

active

07811880

ABSTRACT:
A memory cell of a memory device is fabricated by forming a first electrode on a substrate, positioning a photo mask at a first position relative to the substrate, and forming a first material layer on the first electrode based on a pattern on the photo mask. The photo mask is positioned at a second position relative to the substrate, and a second material layer is formed above the first material layer based on the pattern on the photo mask, the second material layer being offset from the first material layer so that a first sub-cell of the memory cell includes the first material layer and not the second material layer, and a second sub-cell of the memory cell includes both the first and second material layers. A second electrode is formed above the first and second material layers.

REFERENCES:
patent: 4219834 (1980-08-01), Esch et al.
patent: 5217917 (1993-06-01), Takahashi et al.
patent: 5233210 (1993-08-01), Kodama
patent: 5750428 (1998-05-01), Chang
patent: 5897983 (1999-04-01), Hirota et al.
patent: 5912839 (1999-06-01), Ovshinsky et al.
patent: 5989759 (1999-11-01), Ando et al.
patent: 6055180 (2000-04-01), Gudesen et al.
patent: 6066537 (2000-05-01), Poh
patent: 6101120 (2000-08-01), Ishida
patent: 6584029 (2003-06-01), Tran et al.
patent: 6690597 (2004-02-01), Perlov et al.
patent: 6713231 (2004-03-01), Hasegawa et al.
patent: 6777762 (2004-08-01), Chang
patent: 6958292 (2005-10-01), Hasegawa et al.
patent: 7023014 (2006-04-01), Morimoto et al.
patent: 7090949 (2006-08-01), Nojima et al.
patent: 7312020 (2007-12-01), Lin et al.
patent: 2002/0028391 (2002-03-01), Nakao
patent: 2002/0155395 (2002-10-01), Nakao
patent: 2002/0190350 (2002-12-01), Kozicki et al.
patent: 2003/0003675 (2003-01-01), Hsu
patent: 2004/0062083 (2004-04-01), Layman et al.
patent: 2004/0223357 (2004-11-01), Gilton
patent: 2005/0036368 (2005-02-01), Yeh et al.
patent: 2005/0036386 (2005-02-01), Demone
patent: 2005/0100829 (2005-05-01), Lin et al.
patent: 2005/0237783 (2005-10-01), Lee
patent: 2008/0042171 (2008-02-01), Mosler et al.
patent: 2008/0220573 (2008-09-01), Takahashi et al.
patent: 2010/0155802 (2010-06-01), Ohuchi
patent: 1267389 (2000-09-01), None
patent: 1411074 (2003-04-01), None
patent: 1581489 (2005-02-01), None
International Search Reportfor PCT/CN2007/07030, mailed Nov. 8, 2007 (6 pages).
U.S. Appl. No. 11/503,671, filed Aug. 14, 2006, Shuy et al.

Affiliated with

Also associated with

Rating

Fabrication of recordable electrical memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabrication of recordable electrical memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication of recordable electrical memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4198042