Fabrication of raised source-drain transistor devices

Details Fabrication of raised source-drain transistor devices Fabrication of raised source-drain transistor devices

1996-11-22

2000-04-18

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438308, 438486, 438558, H01L 21336

Patent

active

060514736

ABSTRACT:
A process in accordance with the invention enables the manufacturability of raised source-drain MOSFETs. In accordance with the invention, a raised source-drain material, having a window therein, is formed over the substrate. A gate oxide and window sidewall oxides are subsequently formed. Dopants are diffused into the substrate. A gate is formed within the window.

REFERENCES:
patent: 4471522 (1984-09-01), Jambotkar
patent: 4803173 (1989-02-01), Sill et al.
patent: 4845046 (1989-07-01), Shimbo
patent: 4939156 (1990-07-01), Shimbo
patent: 4978629 (1990-12-01), Komori et al.
patent: 4992388 (1991-02-01), Pfiester
patent: 5093275 (1992-03-01), Tasch et al.
patent: 5108937 (1992-04-01), Tsai et al.
patent: 5231038 (1993-07-01), Yamaguchi et al.
patent: 5238857 (1993-08-01), Sato et al.
patent: 5250454 (1993-10-01), Maszara
patent: 5436474 (1995-07-01), Banerjee et al.
patent: 5508541 (1996-04-01), Hieda et al.
patent: 5545579 (1996-08-01), Liang et al.
patent: 5824586 (1998-10-01), Wollesen et al.
Kimura et al, "Short-Channel Effect-Suppressed Sub 0.1 .mu.m Grooved-Gate MOSFET's with W gate", IEEE Transaction on Electron Device, vol. 42, Jan. 1995, No. 1, pp 96-99.
Raised Source/Drain MOSFET with Dual Sidewall Spacers, M. Rodder, D. Yeakley, IEEE V. 12, No. 3, Mar. 1991.
MOSFET Drain Engineering Analysis for Deep-Submicrometer Dimension: A New Structural Approach, Shin, et al., IEEE V. 39, No. 8, Aug. 1992.

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