Fabrication of optical-quality facets vertical to a (001)...

Details Fabrication of optical-quality facets vertical to a (001)... Fabrication of optical-quality facets vertical to a (001)...

2006-01-06

2008-10-07

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21235

Reexamination Certificate

active

07432161

ABSTRACT:
Methods for forming {110} type facets on a (001) oriented substrate of Group III-V compounds and Group IV semiconductors using selective epitaxial growth is provided. The methods include forming a dielectric film on a (100) substrate. The dielectric film can then be patterned to expose a portion of the substrate and to form a substrate-dielectric film boundary substantially parallel to a <110> direction. A {110} type sidewall facet can then be formed by epitaxially growing a semiconductor layer on the exposed portion of the substrate and the dielectric film.

REFERENCES:
patent: 7122449 (2006-10-01), Langdo et al.
patent: 2001/0016387 (2001-08-01), Derraa
patent: 2001/0026006 (2001-10-01), Noble et al.
patent: 2004/0256639 (2004-12-01), Ouyang et al.
patent: 2007/0141763 (2007-06-01), Choi et al.

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