Metal treatment – Barrier layer stock material – p-n type
Reexamination Certificate
2007-03-06
2007-03-06
Fourson, George (Department: 2823)
Metal treatment
Barrier layer stock material, p-n type
C438S046000, C438S047000, C438S479000, C438S938000, C257SE21113, C257SE21463
Reexamination Certificate
active
11123805
ABSTRACT:
A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes.
REFERENCES:
patent: 5926726 (1999-07-01), Bour et al.
patent: 6051849 (2000-04-01), Davis et al.
patent: 6153010 (2000-11-01), Kiyoku et al.
patent: 6156581 (2000-12-01), Vaudo et al.
patent: 6177057 (2001-01-01), Purdy
patent: 6177292 (2001-01-01), Hong et al.
patent: 6180270 (2001-01-01), Cole et al.
patent: 6268621 (2001-07-01), Emmi et al.
patent: 6350666 (2002-02-01), Kryliouk
patent: 6413627 (2002-07-01), Motoki et al.
patent: 6441391 (2002-08-01), Ohno et al.
patent: 6468882 (2002-10-01), Motoki et al.
patent: 6582986 (2003-06-01), Kong et al.
patent: 6586316 (2003-07-01), Tsuda et al.
patent: 6602763 (2003-08-01), Davis et al.
patent: 6623560 (2003-09-01), Biwa et al.
patent: 6635901 (2003-10-01), Sawaki et al.
patent: 6645295 (2003-11-01), Koike et al.
patent: 6900070 (2005-05-01), Craven et al.
patent: 2001/0029086 (2001-10-01), Ogawa et al.
patent: 2002/0047113 (2002-04-01), Ohno et al.
patent: 2003/0114017 (2003-06-01), Wong et al.
patent: 2004/0108513 (2004-06-01), Narukawa et al.
patent: 2004/0251471 (2004-12-01), Dwilinski et al.
patent: 2004/0261692 (2004-12-01), Dwilinski et al.
patent: 2005/0214992 (2005-09-01), Chakraborty et al.
patent: 2006/0138431 (2006-06-01), Dwilinski et al.
patent: 0 942 459 (1999-09-01), None
patent: 2001 257166 (2001-09-01), None
patent: 2002 076329 (2002-03-01), None
patent: 2002 076521 (2002-03-01), None
patent: WO 2004/061909 (2004-07-01), None
patent: WO 2004/061969 (2004-07-01), None
patent: WO 2005/064643 (2005-07-01), None
Amano, H. et al., “Stress and Defect Control in GaN Using Low Temperature Interlayers,” Jpn. J. Appl. Phys. vol. 37 (1998), pp. L 1540-L 1542.
Wang, F. et al., “Crystal Tilting in the Epitaxial Laterally Overgrown GaN Films on Sapphire Substrate by Hydride Vapor Phase Epitaxy”, Solid State and Integrated-Circuit Technology Proceedings, 6thInternational Conference, Oct. 2001, vol. 2, pp. 1998-1201.
Maruska, H.P. et al., “Development of 50 mm Diameter Non-Polar Gallium Nitride Substrates for Device Applications”, International Conference on Indium Phosphide and Related Materials, May 16, 2003, pp. 567-570.
Craven, M.D., et al., “Structural characterization of nonpolar (1120) α-plane GaN thin films grown on (1102)r-plane sapphire”, Applied Physics Letters, vol. 81, No. 3, Jul. 15, 2002, pp. 469-471, XP002250684.
Dupuis, R.D., et al., “Selective-area and lateral epitaxial overgrowth of III-N materials by metalorganic chemical vapor deposition”, Journal of Crystal Growth, vol. 195, No. 1-4, Dec. 15, 1998, pp. 340-345, XP004154285.
Grzegory, I., et al., “Seeded growth of GaN at high N2pressure on (0 0 0 1) polar surfaces of GaN single crystalline substrates”, Materials Science in Semiconductor Processing, vol. 4, No. 6, Dec. 2001, pp. 535-541, XP004345737.
Liu, L. et al., “Substrates for gallium nitride epitaxy”, Materials Science and Engineering R, Reports: A Review Journal, vol. 37, No. 3, Apr. 30, 2002, pp. 61-127, XP004349792.
Marchand, H., et al., “Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition”, Journal of Crystal Growth, vol. 195, No. 1-4, Dec. 15, 1998, pp. 328-332, XP004154283.
Mills, Alan, “Wide-bandgap emitters continue to improve”, III-Vs Review, vol. 13, No. 3, May 2000, pp. 23-24, 26, 28-30, XP004200697.
Sasaki, T., et al., “Substrate-orientation dependence of GaN single-crystal films grown by metalorganic vapor-phase epitaxy”, Journal of Applied Physics, American Institute of Physics, vol. 61, No. 7, Apr. 1, 1987, pp. 2533-2540, XP000820119.
Sun, Chien-Jen, et al., “Comparison of the physical properties of GaN thin films deposited on (0001) and (0112) sapphire substrates”, Applied Physics Letters, vol. 63, No. 7, 1993, pp. 973-975, XP002251480.
Amano, H., et. al., “Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AIN buffer layer” Appl. Phys. Lett. 48 (5), Feb. 3, 1986, pp. 353-355.
Ambacher, O., et. al., “Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures” J. Appl. Phys., 85 (6), Mar. 15, 1999, pp. 3222-3233.
Bottcher, T., et al., “The role of high-temperature island coalescence in the development of stresses in GaN films” Appl. Phys. Lett. 78 (14), Apr. 2, 2001, pp. 1976-1978.
Brandt, O., et al., “Determination of strain state and composition of highly mismatched group-III nitride heterostructures by x-ray diffraction” J. Phys. D. Appl. Phys. 35 (2002), pp. 577-585.
Craven, M.D., et al., “Characterization of a-Plane GaN/(Al,Ga)N Multiple Quantum Wells Grown via Metalorganic Chemical Vapor Deposition” Jpn. J. Appl. Phys. Vol. 42, (2003), pp. L235-L238.
Craven, M.D., et al., “Threading dislocation reduction via laterally overgrown nonpolar (1120) a-plane GaN” Appl. Phys. Lett. 81 (7), Aug. 12, 2002, pp. 1201-1203.
Dovidenko, K., et. al., Characteristics of stacking faults in AIN thin films J. Appl. Phys. 82 (9), Nov. 1, 1997, pp. 4296-4299.
Eastman, L.F., “The Toughest Transistor Yet” IEEE Spectrum 39 (5), May 2002, pp. 28-33.
Eddy, C.R., Jr., “Growth of gallium nitride thins films by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy” J. Appl. Phys. 73 (1), Jan. 1, 1993, pp. 448-455.
Etzkorn, E.V., et al., “Cracking of GaN films” J. Appl. Phys. 89 (2), Jan. 15, 2001, pp. 1025-1034.
Freitas, J. A., Jr., et al., “Optical characterization of lateral epitaxial overgrown GaN layers” Appl. Phys. Lett. 72 (23), Jun. 8, 1998, pp. 2990-2992.
Grandjean, N., et al., “Built-in electric-field effects in wurtzite AlGaN quantum wells” J. Appl. Phys. 86 (7), Oct. 1, 1999, pp. 3714-3720.
Heying, B., et al., “Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films” Appl. Phys. Lett. 68 (5), Jan. 29, 1996, pp. 643-645.
I. J. Seo, et. al., “Reduction of oscillator strength due to piezoelectric fields in GaN/ AlxGa1−xN quantum wells” Phys. Rev. B. 57 (16), Apr. 15, 1998-II, pp. R9435-R9438.
Iwata, K., et. al., “Gas Source Molecular Beam Epitaxy Growth of GaN on C-, A-, R-, and M-Plane Sapphire and Silica Glass Substrates” Jpn. J. Appl. Phys. vol. 36 (1997), pp. L 661-L664.
Kapolnek, D., et al., “Anisotropic epitaxial lateral growth in GaN selective area epitaxy” Appl. Phys. Lett. 71 (9), Sep. 1, 1997, pp. 1204-1206.
Langer, R., et. al., “Giant electric fields in unstrained GaN single quantum wells” Appl. Phys. Lett., 74 (25), Jun. 21, 1999, pp. 3827-3829.
Lefebvre, P. et al., “High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy” Appl. Phys. Lett. 78 (9), Feb. 26, 2001, pp. 1252-1254.
Lefebvre, P., et al., “Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl)N quantum wells” Phys. Rev. B. 59 (23), Jun. 15, 1999-I, pp. 15363-15367.
Lei, T., “Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates” J. Appl. Phys. 74 (7), Oct. 1, 1993, pp. 4430-4437.
Leroux, M., “Barrier-width dependence of group-III nitrides quantum-well transition energies” Phys. Rev. B. 60 (3), Jul. 15, 1991-I, pp. 1496-1499.
Leszczynski, M., et. al., “Lattice parameters of gallium nitride” Appl. Phys. Lett. 69 (1), Jul. 1, 1996, pp. 73-75.
Marchand, H., et al., “Microstructure of GaN laterally
Chakraborty Arpan
Denbaars Steven P.
Haskell Benjamin A.
Keller Stacia
Mishra Umesh Kumar
Fourson George
Gates & Cooper LLP
The Agency of Industrial Science and Technology
The Regents of the University of California
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