Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-02-10
2000-07-18
Clark, Sheila V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257407, 257388, H01L 2976, H01L 2994, H01L 31062, H01L 31113, H01L 31119
Patent
active
060911220
ABSTRACT:
A method of fabricating a mid-gap workfunction tungsten gate or W electrode directly onto a gate dielectric material for use in high speed/high density advanced MOS and CMOS devices is provided which utilizes low temperature/low pressure CVD of a tungsten carbonyl. MOS and CMOS devices containing one or more of the CVD W gates or W electrodes manufactured by the present invention are also provided herein.
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Buchanan Douglas Andrew
McFeely Fenton Read
Yurkas John Jacob
Clark Sheila V.
International Business Machines - Corporation
Trepp, Esq. Robert M.
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