Fabrication of MEMS devices with spin-on glass

Etching a substrate: processes – Etching of semiconductor material to produce an article...

Reexamination Certificate

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C216S038000, C216S047000, C216S062000, C216S072000, C216S080000, C438S048000, C438S717000, C438S719000, C438S723000

Reexamination Certificate

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06896821

ABSTRACT:
A method of making an etched structure in the fabrication of a MEMS device involves depositing a bulk layer, typically of polysilicon, prone to surface roughness. At least one layer of photo-insensitive spin-on planarizing material, such as silicate-based spin-on glass, is formed on the bulk layer to reduce surface roughness. This is patterned with a photoresist layer. A deep etch is then performed through the photoresist layer into the bulk layer. This technique results in much more precise etch structures.

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