Etching a substrate: processes – Etching of semiconductor material to produce an article...
Reexamination Certificate
2005-05-24
2005-05-24
Olsen, Allan (Department: 1763)
Etching a substrate: processes
Etching of semiconductor material to produce an article...
C216S038000, C216S047000, C216S062000, C216S072000, C216S080000, C438S048000, C438S717000, C438S719000, C438S723000
Reexamination Certificate
active
06896821
ABSTRACT:
A method of making an etched structure in the fabrication of a MEMS device involves depositing a bulk layer, typically of polysilicon, prone to surface roughness. At least one layer of photo-insensitive spin-on planarizing material, such as silicate-based spin-on glass, is formed on the bulk layer to reduce surface roughness. This is patterned with a photoresist layer. A deep etch is then performed through the photoresist layer into the bulk layer. This technique results in much more precise etch structures.
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(Marks & Clerk)
DALSA Semiconductor Inc.
Mitchell Richard J.
Olsen Allan
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