Fabrication of lean-free stacked capacitors

Details Fabrication of lean-free stacked capacitors Fabrication of lean-free stacked capacitors

2006-12-26

2006-12-26

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S254000, C438S255000, C438S256000, C257SE21396

Reexamination Certificate

active

07153740

ABSTRACT:
For fabricating lean-free stacked capacitors, openings are formed through layers of materials including a layer of support material displaced from a bottom of the openings. A respective first electrode is formed for a respective capacitor within each of the openings. The layer of support material is patterned to form support structures around the first electrodes. Masking spacers are formed around exposed top portions of the first electrodes, and exposed portions of the support material are etched away to form the support structures. Such stacked capacitors are applied within a DRAM (dynamic random access memory).

REFERENCES:
patent: 6500763 (2002-12-01), Kim et al.
patent: 2001/0005631 (2001-06-01), Kim et al.
patent: 2003/0085420 (2003-05-01), Ito et al.
patent: 2003/0136996 (2003-07-01), Park
patent: 2003/0224571 (2003-12-01), Iijima et al.

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