Fabrication of lateral RF MOS devices with enhanced RF propertie

Details Fabrication of lateral RF MOS devices with enhanced RF propertie Fabrication of lateral RF MOS devices with enhanced RF propertie

1999-07-31

2000-05-16

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438197, 438282, 438289, 438299, 438301, 438290, 438291, 257343, 257328, 257335, H01L 21336

Patent

active

060636785

ABSTRACT:
Methods of fabrication of a lateral RF MOS device having a non-diffusion connection between source and substrate are disclosed. In one embodiment, the lateral RF MOS device has an interdigitated silicided gate structure. In another embodiment, the lateral RF MOS device has a quasi-mesh silicided gate structure. Both sides of each gate are oxidized thus preventing possible shorts between source and gate regions and between drain and gate regions. The top of each gate is silicided once the protective layer of silicon nitride is removed.

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patent: 5071777 (1991-12-01), Gahle
patent: 5514608 (1996-05-01), Williams et al.
patent: 5760440 (1998-06-01), Kitamura et al.
patent: 5900663 (1999-05-01), Johnson et al.
patent: 5949104 (1999-09-01), D'Anna et al.

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