Fabrication of integrated circuit elements in structures...

Details Fabrication of integrated circuit elements in structures... Fabrication of integrated circuit elements in structures...

2006-02-07

2006-02-07

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S975000

Reexamination Certificate

active

06995060

ABSTRACT:
A structure is obtained having a semiconductor substrate, the structure having an upward protruding feature (140). A first layer (160) is formed on the structure. The first layer (160) has a first portion (170.1) protruding upward over the protruding feature (140). Then a second layer (1710) is formed over the first layer (160) such that the first portion (170.1) is exposed and not completely covered by the second layer (1710). The first layer (160) is partially removed selectively to the second layer to form a cavity (1810) at the location of the first feature (140). A third layer (1910) is formed in the cavity. Then at least parts of the second layer (1710) and the first layer (160) are removed selectively to the third layer (1910). In some embodiments, self-aligned features are formed from the first layer (160) over the sidewalls of the first features (140) as a result.

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