Fabrication of gate dielectric in nonvolatile memories in...

Details Fabrication of gate dielectric in nonvolatile memories in... Fabrication of gate dielectric in nonvolatile memories in...

2006-05-30

2006-05-30

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S257000, C438S585000

Reexamination Certificate

active

07052947

ABSTRACT:
In fabrication of a nonvolatile memory cell having two floating gates, one or more peripheral transistor gates are formed from the same layer (140) as the select gate. The gate dielectric (130) for these peripheral transistors and the gate dielectric (130) for the select gates are formed simultaneously. In a nonvolatile memory having a memory cell with two floating gates, the gate dielectric (130) for the peripheral transistors and the gate dielectric (130) for the select gates (140) have the same thickness.

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