Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-08-12
1999-10-19
Arroyo, Teresa M.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438138, 438206, 438209, 438212, 438526, 438554, H01L 21336
Patent
active
059703431
ABSTRACT:
In the manufacture of an MOS gated semiconductor device, indentations are provided on a surface of a semiconductor wafer extending inwardly of respective spaced apart regions at the wafer surface having doping concentrations greater than that present in the remainder of the wafer. A layer of silicon having a doping concentration less than that of the substrate is conformally provided on the substrate surface whereby the indentations in the substrate surface are replicated on the surface of the silicon layer. Dopants in the substrate regions are then out-diffused into the silicon layer to provide highly doped buried regions within the layer. Then, using the silicon layer surface indentations as photomask alignment marks, gate electrode structures are formed on and within the silicon layer in preselected orientation relative to the buried regions. The buried regions provide low resistance paths for current through the resulting devices.
Arroyo Teresa M.
Harris Corp.
Pham Long
Schanzer Henry I
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