Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-06-07
2005-06-07
Blum, David S. (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S267000, C438S596000
Reexamination Certificate
active
06902974
ABSTRACT:
A control gate layer (170) for a nonvolatile memory cell is formed over a select gate (140). The control gate layer protrudes upward over the select gate. An auxiliary layer (1710) is formed over the control gate layer so as to expose a protruding portion of the control gate layer. The protruding portion is processed (e.g. oxidized) to form a protective layer (1720) selectively on the control gate layer but not on the auxiliary layer. The auxiliary layer is then removed. Then the control gate layer is etched selectively to the protective layer. The protruding portion of the control gate layer is not etched away because it is protected by the protective layer. This portion provides a self-aligned control gate. The protective layer can then be removed, and a conductive material (2920), e.g. metal silicide, can be formed selectively on the protruding portion of the control gate layer in a self-aligned manner to reduce the control gate resistance. Other embodiments are also provided.
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Blum David S.
MacPherson Kwok & Chen & Heid LLP
ProMOS Technologies Inc.
Shenker Michael
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