Fabrication of an OTP-EPROM having reduced leakage current

Details Fabrication of an OTP-EPROM having reduced leakage current Fabrication of an OTP-EPROM having reduced leakage current

2007-07-17

2007-07-17

Hoang, Quoc (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S214000, C257SE21179, C257SE21422, C257SE29300

Reexamination Certificate

active

10442524

ABSTRACT:
The leakage current of an OTP-EPROM cell formed using buried channel PMOS technology can be reduced. The reduction in leakage current of the OTP-EPROM can be achieved by blocking implantation of the Vtpimplant into a channel region of an n-well that substantially underlies a floating gate structure. The Vtpimplant can be blocked by providing a mask overlying the surface of the channel region of the n-well during implantation of the Vtpimplant.

REFERENCES:
patent: 5574685 (1996-11-01), Hsu
patent: 5606518 (1997-02-01), Fang et al.
patent: 5923975 (1999-07-01), Rolandi
patent: 6071775 (2000-06-01), Choi et al.
patent: 6075718 (2000-06-01), Fontana et al.
patent: 6323143 (2001-11-01), Yu
patent: 6420223 (2002-07-01), Camerlenghi
patent: 6433392 (2002-08-01), Amerasekera et al.
patent: 6448121 (2002-09-01), Brighton
patent: 6469341 (2002-10-01), Sung et al.
patent: 6509606 (2003-01-01), Merrill et al.
patent: 6514810 (2003-02-01), Kim et al.
patent: 6649983 (2003-11-01), Chatterjee
patent: 6717221 (2004-04-01), Post et al.
patent: 6743291 (2004-06-01), Ang et al.
patent: 6774707 (2004-08-01), Smith et al.
patent: 6909138 (2005-06-01), Forbes
patent: 2003/0203550 (2003-10-01), Lai et al.

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